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Module Code - Title:

PH4111 - SEMICONDUCTORS 2

Year Last Offered:

2025/6

Hours Per Week:

Lecture

2

Lab

0

Tutorial

1

Other

0

Private

7

Credits

6

Grading Type:

N

Prerequisite Modules:

PH4071
PH4805

Rationale and Purpose of the Module:

The purpose of the module is introduce advanced CMOS process technology and the problems associated with device fabrication as the technology moves towards 30 nm features and below.

Syllabus:

CMOS process flow: CMOS fabrication steps, active region formation, shallow trench isolation, n and p well formation. Gate formation: threshold voltage, control of Vth in n and p channel MOS devices, tip or LDD formation (hot electrons), side wall spacer. Source and drain formation: contact and interconnect formation, multilevel metal formation for ULSI, RC time delay. Surface contaminants: particles, metallic contaminants, organic contaminants, native/chemical oxide, moisture. Cleaning processes: surface characteristics, wet cleaning, dry cleaning,supercritical fluid cleaning, lamp cleaning-surface refreshing. Cleaning /Etching Chemistries]: contamination reduction, gettering (intrinsic and extrinsic). Chemical Mechanical Polishing (CMP): SiO2 inter-level dielectric layers planarisation, tungsten plug formation and shallow trench isolation. Dual Damascene: trench first approach, via first approach, optical proximity correction. High and low K dielectrics: silicon on insulator, ultra thin oxides, gate dielectrics, degradation mechanisms, nitroxides, fluorinated oxides, shallow junction formation, transient enhanced diffusion. Electrstatic discharge (ESD): basics of ESD, principles of ESD control. Semiconductor Metrology: CD and overlay measurements, electrical and optical measurements. Assembly: frontend assembly, backend assembly. Semiconductor failure analysis: implant metrology, interconnect process metrology, ellpsometry, reflectrometry, sheet resistance measurements.

Learning Outcomes:

Cognitive (Knowledge, Understanding, Application, Analysis, Evaluation, Synthesis)

- Define key concepts relating to advanced CMOS process technology. - Describe the principal stages of IC fabrication, and the tools and materials required. - Explain the physical principles involved in advanced CMOS process technology and device fabrication - Derive relevant equations describing advanced CMOS process technology, from basic laws and principles. - Solve numerical problems from information provided on the topics covered.

Affective (Attitudes and Values)

Discuss the importance of advanced CMOS process technology in applied physics.

Psychomotor (Physical Skills)

N/A

How the Module will be Taught and what will be the Learning Experiences of the Students:

Students will learn via interactive lectures, tutorials, projects and problem based private study.

Research Findings Incorporated in to the Syllabus (If Relevant):

Prime Texts:

Robert F. Pierret (1983) Module Series on Solid State Devices , Wesley
James D. Plummer (2000) Silicon VLSI technology , Prentice Hall

Other Relevant Texts:

A.Arshak () advanced Technology , unpublished notes

Programme(s) in which this Module is Offered:

Semester(s) Module is Offered:

Module Leader:

fernando.rhen@ul.ie