Module Code - Title:
PH4111
-
SEMICONDUCTORS 2
Year Last Offered:
2025/6
Hours Per Week:
Grading Type:
N
Prerequisite Modules:
PH4071
PH4805
Rationale and Purpose of the Module:
The purpose of the module is introduce advanced CMOS process technology and the problems associated with device fabrication as the technology moves towards 30 nm features and below.
Syllabus:
CMOS process flow: CMOS fabrication steps, active region formation, shallow trench isolation, n and p well formation. Gate formation: threshold voltage, control of Vth in n and p channel MOS devices, tip or LDD formation (hot electrons), side wall spacer. Source and drain formation: contact and interconnect formation, multilevel metal formation for ULSI, RC time delay. Surface contaminants: particles, metallic contaminants, organic contaminants, native/chemical oxide, moisture.
Cleaning processes: surface characteristics, wet cleaning, dry cleaning,supercritical fluid cleaning, lamp cleaning-surface refreshing. Cleaning /Etching Chemistries]: contamination reduction, gettering (intrinsic and extrinsic). Chemical Mechanical Polishing (CMP): SiO2 inter-level dielectric layers planarisation, tungsten plug formation and shallow trench isolation. Dual Damascene: trench first approach, via first approach, optical proximity correction. High and low K dielectrics: silicon on insulator, ultra thin oxides, gate dielectrics, degradation mechanisms, nitroxides, fluorinated oxides, shallow junction formation, transient enhanced diffusion.
Electrstatic discharge (ESD): basics of ESD, principles of ESD control.
Semiconductor Metrology: CD and overlay measurements, electrical and optical measurements. Assembly: frontend assembly, backend assembly. Semiconductor failure analysis: implant metrology, interconnect process metrology, ellpsometry, reflectrometry, sheet resistance measurements.
Learning Outcomes:
Cognitive (Knowledge, Understanding, Application, Analysis, Evaluation, Synthesis)
- Define key concepts relating to advanced CMOS process technology.
- Describe the principal stages of IC fabrication, and the tools and materials required.
- Explain the physical principles involved in advanced CMOS process technology and device fabrication
- Derive relevant equations describing advanced CMOS process technology, from basic laws and principles.
- Solve numerical problems from information provided on the topics covered.
Affective (Attitudes and Values)
Discuss the importance of advanced CMOS process technology in applied physics.
Psychomotor (Physical Skills)
N/A
How the Module will be Taught and what will be the Learning Experiences of the Students:
Students will learn via interactive lectures, tutorials, projects and problem based private study.
Research Findings Incorporated in to the Syllabus (If Relevant):
Prime Texts:
Robert F. Pierret (1983)
Module Series on Solid State Devices
, Wesley
James D. Plummer (2000)
Silicon VLSI technology
, Prentice Hall
Other Relevant Texts:
A.Arshak ()
advanced Technology
, unpublished notes
Programme(s) in which this Module is Offered:
Semester(s) Module is Offered:
Module Leader:
fernando.rhen@ul.ie