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Module Code - Title:

PH5092 - SEMICONDUCTOR PROCESSES 2

Year Last Offered:

2025/6

Hours Per Week:

Lecture

2

Lab

0

Tutorial

1

Other

0

Private

7

Credits

6

Grading Type:

N

Prerequisite Modules:

Rationale and Purpose of the Module:

The purpose of the module is to introduce advanced CMOS process technology and the problems associated with the device fabrication as the technology moves towards nanoscale features.

Syllabus:

CMOS (Complementary Metal-Oxide-Semiconductor) process flow: CMOS fabrication steps, active region formation, shallow trench isolation, n and p well formation. Gate formation: threshold voltage, control of Vth in n and p channel MOS devices, tip or LDD formation (hot electrons), sidewall spacer. Fundaments of CMOS Devices and Integration of Devices. Source and drain formation: contact and interconnect formation, multilevel metal formation for ULSI, RC time delay, reliability. clean room classes . Cleaning processes: surface characteristics, wet cleaning, dry cleaning, supercritical fluid cleaning, and lamp cleaning-surface refreshing. Cleaning /Etching Chemistries]: contamination reduction, gettering (intrinsic and extrinsic). Chemical Mechanical Polishing (CMP): SiO2 inter-level dielectric layers planarization, tungsten plug formation and shallow trench isolation. Dual Damascene: trench first approach, via first approach, optical proximity correction. High and low K dielectrics: silicon on insulator, ultra thin oxides, gate dielectrics. Electrostatic discharge (ESD): basics of ESD, principles of ESD control.

Learning Outcomes:

Cognitive (Knowledge, Understanding, Application, Analysis, Evaluation, Synthesis)

On successful completion of this module students will be able to: 1) Define key concepts relating to advance CMOS process technology. 2) Describe the principal stages of IC fabrication, and the tools and materials required. 3) Explain the physical principles involved in advanced CMOS process technology and device fabrication 4) Derive relevant equations describing advanced CMOS process technology, from basic laws and principles. 5) Solve numerical problems from information provided on the topics covered.

Affective (Attitudes and Values)

On successful completion of this module students will be able to: 1) Discuss the value of advanced CMOS process technology in applied physics.

Psychomotor (Physical Skills)

N/A

How the Module will be Taught and what will be the Learning Experiences of the Students:

The module will be taught via interactive lecture, experiential tutorial, problem-based private study, self directed learning, recommended reading, reflection on and application to physics-related research problems, enquiry based learning, observation, demonstration, skills acquisition and adaptation, mentorship and lab supervision. Students will learn basic concepts and learn how apply their knowledge to solve physical and numerical problems.

Research Findings Incorporated in to the Syllabus (If Relevant):

Prime Texts:

Pierret, Robert F. (2020) Advanced Semiconductor Fundamentals: 6 (Modular Series on Solid State Devices) , Wesley
Plummer, James D. (2000) Silicon VLSI Technology , Prentice Hall
Taur, Y. (2013) Fundamentals of Modern VLSI Devices , Cambridge

Other Relevant Texts:

A.Arshak () Advanced Semiconductor Technology Notes , Unpublished

Programme(s) in which this Module is Offered:

Semester(s) Module is Offered:

Spring

Module Leader:

fernando.rhen@ul.ie